MRF6V13250HR3 Datasheet, PDF (5/13 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — PULSED
1000
C_iss
100
C_oss
Measured with ±30 mV(rms)ac @ 1 MHz
10
V_GS = 0 Vdc
C_rss
1
0
10
20
30
40
50
V_DS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Capacitance versus Drain--Source Voltage
60
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1300 MHz
59 ^{Pulse Width = 200 μsec, Duty Cycle = 10%}
58
P3dB = 55.4 dBm
(345 W)
57
P2dB = 55.1 dBm
(326 W)
56 _{P1dB = 54.7 dBm}
(293 W)
55
Ideal
Actual
54
53
30
31
32
33
34
35
36
37
P_in, INPUT POWER (dBm) PULSED
Figure 4. Pulsed Output Power versus
Input Power
24
70
V_DD = 50 Vdc, I_DQ = 100 mA, f = 1300 MHz
23 ^{Pulse Width = 200 μsec Duty Cycle = 10%}
60
22
50
21
40
G_ps
20
30
19
20
η_D
18
10
17
0
1
10
100
500
P_out, OUTPUT POWER (WATTS) PULSED
Figure 5. Pulsed Power Gain and Drain Efficiency
versus Output Power
25
23
21
19
V_DD = 50 V
45 V
17
40 V
35 V
15
30 V
13
25 V
I_DQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
20 V
11
Duty Cycle = 10%
0
50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 6. Pulsed Power Gain versus
Output Power
70
40 V
60
35 V
30 V
50
25 V
20 V
40
45 V ^VDD ^{= 50 V}
30
20
I_DQ = 100 mA, f = 1300 MHz
Pulse Width = 200 μsec
Duty Cycle = 10%
10
0
50 100 150 200 250 300 350 400
P_out, OUTPUT POWER (WATTS) PULSED
Figure 7. Pulsed Efficiency versus
Output Power
24
V_DD = 50 Vdc
23 ^{IDQ = 100 mA}
f = 1300 MHz
G_ps
22 ^{Pulse Width = 200 μsec}
Duty Cycle = 10%
70
--30_C
60
50
21
20 ^TC ^{= --30_C}
40
85_C
30
19
25_C
18
η_D
25_C
20
10
17
85_C
0
3
10
100
500
P_out, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain and Drain Efficiency
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6V13250HR3 MRF6V13250HSR3
5