MRF6S27015NR1_08 Datasheet, PDF (7/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18
64
17
G_ps
16
15
14
T_C = −30_C
25_C
85_C
−30_C
56
25_C ₄₈
85_C
40
32
13
24
η_D
12
V_DD = 28 Vdc
16
11
I_DQ = 160 mA
f = 2600 MHz
8
10
0
1
10
P_out, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
15
I_DQ = 160 mA
f = 2600 MHz
14
13
12
11
V_DD = 24 V ^{28 V 32 V}
10
5
10
15
20
25
30
P_out, OUTPUT POWER (WATTS) CW
Figure 12. Power Gain versus Output Power
25
V_DD = 28 Vdc, I_DQ = 160 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
20 _{7 MHz Channel Bandwidth, f = 2600 MHz}
15
3
10⁹
2.5
10⁸
2
10
1.5
η_D
5
EVM
1
0
0.5
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
P_out, OUTPUT POWER (dBm)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
10⁷
10⁶
90 110 130 150 170 190 210 230 250
T_J, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours when the device
is operated at V_DD = 28 Vdc, P_out = 3 W Avg., and η_D = 22%.
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 14. MTTF versus Junction Temperature
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
7