MRF6S27015NR1_08 Datasheet, PDF (5/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
16
24
15
23
14 ^Gps
22
13
η_D
12
V_DD = 28 Vdc, P_out = 3 W (Avg.)
21
I_DQ = 160 mA, Single−Carrier W−CDMA
20
−5
11
IRL
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
−30
−10
10 _ACPR
−40
−15
9
−50
−20
ALT1
8
−60
−25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ P_out = 3 Watts Avg.
15
32
14 _Gps
31
13
30
12 _ηD
V_DD = 28 Vdc, P_out = 6 W (Avg.)
I_DQ = 160 mA, Single−Carrier W−CDMA
29
11
IRL
3.84 MHz Channel Bandwidth
28
PAR = 8.5 dB @ 0.01% Probability (CCDF)
−5
10
−30
−10
9 ^ACPR
−40
−15
8 _ALT1
−50
−20
7
−60
−25
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ P_out = 6 Watts Avg.
16
I_DQ = 240 mA
190 mA
15
160 mA
14 _{130 mA}
13 80 mA
12
1
V_DD = 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
−10
−15 ^{VDD = 28 Vdc}
f1 = 2595 MHz, f2 = 2605 MHz
−20 _{Two−Tone Measurements}
−25
−30 ^IDQ ^{= 80 mA}
−35
240 mA
−40
−45
−50
130 mA
−55
160 mA
190 mA
−60
1
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
5