MRF6S27015NR1_08 Datasheet, PDF (11/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Table 7. Common Source Scattering Parameters (V_DD = 28 V, I_DQ = 160 mA, T_C = 25°C, 50 ohm system) (continued)
f
MHz
S₁₁
|S₁₁|
∠φ
S₂₁
|S₂₁|
∠φ
S₁₂
|S₁₂|
∠φ
S₂₂
|S₂₂|
∠φ
2400
0.873
- 178.8
0.848
17.2
0.006
31.2
0.953
179.7
2450
0.887
- 179.4
0.786
13.7
0.006
42.2
0.955
179.2
2500
0.897
- 179.9
0.731
10.6
0.007
45.6
0.956
178.7
2550
0.907
179.6
0.682
7.9
0.007
46.5
0.957
178.2
2600
0.914
179.1
0.639
5.5
0.007
48.0
0.958
177.8
2650
0.919
178.8
0.600
3.3
0.007
47.0
0.960
177.2
2700
0.926
178.3
0.566
1.3
0.007
45.8
0.962
176.8
2750
0.931
177.9
0.534
- 0.6
0.006
52.1
0.964
176.2
2800
0.936
177.4
0.505
- 2.2
0.006
62.3
0.965
175.7
2850
0.940
177.0
0.480
- 3.8
0.006
69.8
0.966
175.2
2900
0.942
176.6
0.457
- 5.2
0.007
73.2
0.967
174.7
2950
0.945
176.3
0.436
- 6.5
0.007
78.7
0.968
174.2
3000
0.947
175.8
0.416
- 7.6
0.008
85.1
0.969
173.8
3050
0.949
175.6
0.399
- 8.7
0.009
87.9
0.969
173.2
3100
0.950
175.1
0.382
- 9.6
0.011
88.2
0.970
172.9
3150
0.953
174.8
0.368
- 10.5
0.012
86.9
0.972
172.6
3200
0.955
174.5
0.355
- 11.5
0.014
85.1
0.974
172.1
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
11