MRF6S27015NR1_08 Datasheet, PDF(2/19 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRF6S27015NR1_08 Datasheet, PDF (2/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22 - A114)

1A (Minimum)

Machine Model (per EIA/JESD22 - A115)

A (Minimum)

Charge Device Model (per JESD22 - C101)

IV (Minimum)

Table 4. Moisture Sensitivity Level

Test Methodology

Rating

Package Peak Temperature

Unit

Per JESD 22 - A113, IPC/JEDEC J - STD - 020

260

Â°C

Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

Off Characteristics

Zero Gate Voltage Drain Leakage Current

(VDS = 68 Vdc, VGS = 0 Vdc)

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

IDSS

IGSS

Î¼Adc

500

nAdc

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 40 Î¼Adc)

VGS(th)

1.5

2.2

3.5

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 160 mAdc)

Fixture Gate Quiescent Voltage (1)

(VDD = 28 Vdc, ID = 160 mAdc, Measured in Functional Test)

VGS(Q)

2.8

Vdc

VGG(Q)

2.2

3.1

4.4

Vdc

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 0.4 Adc)

VDS(on)

0.27

0.4

Vdc

Dynamic Characteristics (2)

Reverse Transfer Capacitance

(VDS = 28 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Crss

11.6

Output Capacitance

(VDS = 28 Vdc Â± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)

Coss

22.9

Functional Tests (3) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single - Carrier

W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ Â±5 MHz Offset. PAR = 8.5 dB @

0.01% Probability on CCDF.

Power Gain

Gps

12.5

Drain Efficiency

Î·D

Adjacent Channel Power Ratio

ACPR

- 45

- 42

dBc

Input Return Loss

IRL

- 18

-9

1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit

schematic.

2. Part internally input matched.

3. Measurement made with device in straight lead configuration before any lead forming operation is applied.

MRF6S27015NR1 MRF6S27015GNR1

RF Device Data

Freescale Semiconductor

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