MRF6S27015NR1_08 Datasheet, PDF (6/19 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
−15
−20 ^{VDD = 28 Vdc, IDQ = 160 mA}
f1 = 2595 MHz, f2 = 2605 MHz
−25 Two−Tone Measurements, 10 MHz Tone Spacing
−30
−35
−40 ^{3rd Order}
−45
−50 _{5th Order}
−55
−60
−65
7th Order
1
10
P_out, OUTPUT POWER (WATTS) PEP
Figure 7. Intermodulation Distortion Products
versus Output Power
−25
V_DD = 28 Vdc, P_out = 15 W (PEP)
−30 ^IDQ ^{= 160 mA}
IM3−U
−35 _{Two−Tone Measurements}
IM3−L
(f1 + f2)/2 = Center Frequency of 2600 MHz
−40
IM5−U
−45
IM5−L
−50
IM7−U
IM7−L
−55
−60
1
10
100
TWO−TONE SPACING (MHz)
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
50
49
P6dB = 44.3 dBm (27 W)
Ideal
48
47
P3dB = 43.7 dBm (23 W)
46
45 _{P1dB = 43 dBm (20 W)}
44
43
Actual
42
V_DD = 28 Vdc, I_DQ = 160 mA
41
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
40
26 27 28 29 30 31 32 33 34 35 36
P_in, INPUT POWER (dBm)
Figure 9. Pulsed CW Output Power versus
Input Power
50
−20
V_DD = 28 Vdc, I_DQ = 160 mA, f = 2600 MHz
45 _{Single−Carrier W−CDMA, 3.84 MHz Channel}
−25
40 ^{Bandwidth, PAR = 8.5 dB @ 0.01%}
−30
Probability (CCDF)
35
−35
30
−40
ALT1
25
ACPR
η_D
−45
20
−50
15
G_ps ^−55
10
−60
5
1
−65
10
P_out, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier W - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
6
RF Device Data
Freescale Semiconductor