MRD6S18060MR1 Datasheet, PDF (7/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1900 MHz
17
16 ^{TC = −30_C}
25_C
15
85_C
14
13
70
− 30_C
G_ps
25_C
60
50
40
85_C
η_D
30
12
20
11
V_DD = 26 Vdc
I_DQ = 600 mA
10
f = 1960 MHz
10
0
1
10
100
P_out, OUTPUT POWER (WATTS) CW
Figure 7. Power Gain and Drain Efficiency
versus CW Output Power
4
3.5
3 ^VDD ^{= 26 Vdc}
I_DQ = 450 mA
2.5
2
P_out = 35 W Avg.
25 W Avg.
1.5
10 W Avg.
1
1900 1920
1940 1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 8. Error Vector Magnitude versus
Frequency
12
V_DD = 26 Vdc
10 ^IDQ ^{= 450 mA}
f = 1960 MHz
8
6
4
2
T_C = −30_C, 25_C
η_D
85_C
60
50
85_C
40
30
25_C
20
− 30_C
EVM
10
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 9. Error Vector Magnitude and Drain
Efficiency versus Output Power
− 55
SR 400 kHz
− 60
P_out = 35 W Avg.
25 W Avg.
− 65
10 W Avg.
V_DD = 26 Vdc
− 70
I_DQ = 450 mA
f = 1960 MHz
SR 600 kHz
− 75
− 80
1920
1940
35 W Avg.
25 W Avg.
10 W Avg.
1960
1980
2000
f, FREQUENCY (MHz)
Figure 10. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 45
V_DD = 26 Vdc
−50 ^IDQ ^{= 450 mA}
f = 1960 MHz
− 55
− 60
T_C = −30_C
− 65
25_C
− 70
85_C
− 75
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 11. Spectral Regrowth at 400 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
− 55
V_DD = 26 Vdc
−60 ^IDQ ^{= 450 mA}
f = 1960 MHz
− 65
− 70
− 75
T_C = 85_C
25_C
− 30_C
− 80
− 85
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 12. Spectral Regrowth at 600 kHz
versus Output Power
MRF6S18060MR1 MRF6S18060MBR1
7