MRD6S18060MR1 Datasheet, PDF (12/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1800 MHz
17
η_D
16
57
0
G_ps
55
−4
15
53
−8
14
51
− 12
IRL
13
49
− 16
V_DD = 26 Vdc
I_DQ = 600 mA
12
47
− 20
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 17. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 60 Watts
17
G_ps
16
43
0
41
−4
15
η_D
14
39
−8
37
− 12
IRL
13
35
− 16
V_DD = 26 Vdc
I_DQ = 600 mA
12
33
− 20
1760 1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 18. Power Gain, Input Return Loss and Drain
Efficiency versus Frequency @ P_out = 30 Watts
4.5
4
P_out = 35 W Avg.
3.5
3
2.5
V_DD = 26 Vdc
I_DQ = 450 mA
2
25 W Avg.
1.5
15 W Avg.
1
0.5
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 19. Error Vector Magnitude versus
Frequency
10
50
V_DD = 26 Vdc
8
I_DQ = 450 mA
f = 1860 MHz
40
η_D
6
30
4
T_C = 25_C
20
2
10
EVM
0
0
1
10
100
P_out, OUTPUT POWER (WATTS) AVG.
Figure 20. Error Vector Magnitude and Drain
Efficiency versus Output Power
MRF6S18060MR1 MRF6S18060MBR1
12
RF Device Data
Freescale Semiconductor