MRD6S18060MR1 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: V_DD = 26 Vdc, I_DQ = 600 mA, P_out = 60 Watts
CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz)
Power Gain — 15 dB
Drain Efficiency - 50%
GSM EDGE Application
• Typical GSM EDGE Performance: V_DD = 26 Volts, I_DQ = 450 mA,
P_out = 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V_DD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Document Number: MRF6S18060
Rev. 2, 5/2006
MRF6S18060MR1
MRF6S18060MBR1
1800 - 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060MBR1
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T_C = 25°C
Derate above 25°C
V_DSS
V_GS
P_D
- 0.5, +68
- 0.5, +12
216
1.2
Vdc
Vdc
W
W/°C
Storage Temperature Range
Operating Junction Temperature
T_stg
- 65 to +175
°C
T_J
200
°C
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ⁽¹⁾
Unit
Thermal Resistance, Junction to Case
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
R_θJC
0.81
0.95
°C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
1