MRD6S18060MR1 Datasheet, PDF (13/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS — 1800 MHz
− 50
P_out = 35 W Avg.
− 55
V_DD = 26 Vdc
I_DQ = 450 mA
− 60
25 W Avg.
SR 400 kHz
− 65
15 W Avg.
− 70
35 W Avg.
− 75
25 W Avg.
10 W Avg.
SR 600 kHz
− 80
1780 1800 1820 1840 1860 1880 1900 1920
f, FREQUENCY (MHz)
Figure 21. Spectral Regrowth at 400 kHz and
600 kHz versus Frequency
− 45
− 50
T_C = 25_C
− 55
− 60
− 65
V_DD = 26 Vdc
− 70
I_DQ = 450 mA
f = 1860 MHz
− 75
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 22. Spectral Regrowth at 400 kHz
versus Output Power
− 60
− 65
T_C = 25_C
− 70
− 75
− 80
V_DD = 26 Vdc
I_DQ = 450 mA
f = 1860 MHz
− 85
0
10
20
30
40
50
60
P_out, OUTPUT POWER (WATTS) AVG.
Figure 23. Spectral Regrowth at 600 kHz
versus Output Power
RF Device Data
Freescale Semiconductor
MRF6S18060MR1 MRF6S18060MBR1
13