MRD6S18060MR1 Datasheet, PDF(3/20 Page) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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MRD6S18060MR1 Datasheet, PDF (3/20 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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Table 5. Electrical Characteristics (TC = 25Â°C unless otherwise noted) (continued)

Characteristic

Symbol

Min

Typ

Max

Typical GSM EDGE Performances (In Freescale Broadband Test Fixture, 50 Î¿hm system) VDD = 26 Vdc, IDQ = 450 mA,

Pout = 25 W Avg., 1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz

Power Gain

Gps

15.5

Drain Efficiency

Î·D

Error Vector Magnitude

EVM

Spectral Regrowth at 400 kHz Offset

SR1

- 62

Spectral Regrowth at 600 kHz Offset

SR2

- 76

Typical CW Performances (In Freescale Broadband Test Fixture, 50 Î¿hm system) VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 W,

1805 MHz<Frequency<1880 MHz or 1930 MHz<Frequency<1990 MHz

Power Gain

Gps

Drain Efficiency

Î·D

Input Return Loss

IRL

- 12

Pout @ 1 dB Compression Point, CW

P1dB

Unit

% rms

dBc

RF Device Data

Freescale Semiconductor

MRF6S18060MR1 MRF6S18060MBR1

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