MRF7P20040HR3_10 Datasheet, PDF (6/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
19
60
0
18.5
f = 2010 MHz 2025 MHz
2017.5 MHz
2017.5 MHz
2010 MHz
55
--5
18
50
--10
17.5 ^VDD ^{= 32 Vdc, I}DQA ^{= 150 mA}
2025 MHz ⁴⁵
--15
17
V_GSB = 1.5 Vdc, Single--Carrier
W--CDMA, 3.84 MHz Channel
16.5 ^{Bandwidth, Input Signal}
η_D
40
--20
35
--25
PAR = 9.9 dB @ 0.01%
16 _{Probability on CCDF}
15.5
30
--30
G_ps
2025 MHz
25
--35
15
2017.5 MHz
20
--40
14.5
ACPR
2010 MHz
15
--45
14
10
--50
1
10
50
P_out, OUTPUT POWER (WATTS) AVG.
Figure 7. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
20
--4
16
Gain
--10
12
--16
8
--22
4
IRL
--28
V_DD = 32 Vdc
0
P_in = 0 dBm
--34
I_DQA = 150 mA
--4
V_GSB = 1.5 Vdc
--40
1450 1575 1700 1825 1950 2075 2200 2325 2450
f, FREQUENCY (MHz)
Figure 8. Broadband Frequency Response
MRF7P20040HR3 MRF7P20040HSR3
6
RF Device Data
Freescale Semiconductor