MRF7P20040HR3_10 Datasheet, PDF (1/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Freescale Semiconductor
Technical Data
Document Number: MRF7P20040H
Rev. 2, 12/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1800 to
2200 MHz. Can be used in Class AB and Class C for all typical cellular base
station modulation formats.
• Typical Doherty Single--Carrier W--CDMA Performance: V_DD = 32 Volts,
I_DQA = 150 mA, V_GSB = 1.5 Vdc, P_out = 10 Watts Avg., IQ Magnitude
Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 9.9 dB @
0.01% Probability
on CCDF.
Frequency
G_ps
(dB)
η_D
Output PAR ACPR
(%)
(dB)
(dBc)
2025 MHz
18.2
42.6
7.3
--34.8
MRF7P20040HR3
MRF7P20040HSR3
2010--2025 MHz, 10 W AVG., 32 V
SINGLE W--CDMA
LATERAL N--CHANNEL
RF POWER MOSFETs
• Capable of Handling 5:1 VSWR, @ 32 Vdc, 2017.5 MHz, 50 Watts CW ⁽¹⁾
Output Power (3 dB Input Overdrive from Rated P_out)
• Typical P_out @ 3 dB Compression Point ≃ 50 Watts CW ⁽¹⁾
Features
• Production Tested in a Symmetrical Doherty Configuration
• 100% PAR Tested for Guaranteed Output Power Capability
• Characterized with Series Equivalent Large--Signal Impedance Parameters
and Common Source S--Parameters
• Internally Matched for Ease of Use
• Integrated ESD Protection
• Greater Negative Gate--Source Voltage Range for Improved Class C
Operation
• Designed for Digital Predistortion Error Correction Systems
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units, 56 mm Tape Width, 13 inch Reel.
For R5 Tape and Reel option, see p. 15.
CASE 465M--01, STYLE 1
NI--780--4
MRF7P20040HR3
CASE 465H--02, STYLE 1
NI--780S--4
MRF7P20040HSR3
Table 1. Maximum Ratings
Rating
Drain--Source Voltage
Gate--Source Voltage
Operating Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature ^(2,3)
CW Operation @ T_C = 25°C
Derate above 25°C
Symbol
V_DSS
V_GS
V_DD
T_stg
T_C
T_J
CW
Value
--0.5, +65
--6.0, +10
32, +0
-- 65 to +150
150
225
42.4
0.17
Unit
Vdc
Vdc
Vdc
°C
°C
°C
W
W/°C
RF_inA/V_GSA 3
1 RF_outA/V_DSA
RF_inB/V_GSB 4
2 RF_outB/V_DSB
(Top View)
Figure 1. Pin Connections
Table 2. Thermal Characteristics
Characteristic
Symbol
Value ^(3,4)
Unit
Thermal Resistance, Junction to Case
Case Temperature 78°C, 10 W CW, 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc, 2017.5 MHz
Case Temperature 82°C, 40 W CW⁽¹⁾, 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc, 2017.5 MHz
R_θJC
2.11
1.50
°C/W
1. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
2. Continuous use at maximum temperature will affect MTTF.
3. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
4. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/-
Application Notes -- AN1955.
© Freescale Semiconductor, Inc., 2009--2010. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
1