MRF7P20040HR3_10 Datasheet, PDF (5/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

TYPICAL CHARACTERISTICS
18.5
18 ^{VDD = 32 Vdc, Pout = 10 W (Avg.)}
I_DQA = 150 mA, V_GSB = 1.5 Vdc
17.5
46
G_ps
44
42
17
16.5
η_D
16 ACPR
15.5
40
Single--Carrier W--CDMA
38
3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ ^--28
--14
--1.8
0.01% Probability on CCDF _--30
--16
--2
15
PARC
14.5
--32
--18
--2.2
--34
--20
--2.4
14
13.5
IRL
--36
--22
--2.6
--38
--24
--2.8
1880 1900 1920 1940 1960 1980 2000 2020 2040
f, FREQUENCY (MHz)
Figure 4. Output Peak--to--Average Ratio Compression (PARC)
Broadband Performance @ P_out = 10 Watts Avg.
--10
V_DD = 32 Vdc, P_out = 15 W (PEP), I_DQA = 150 mA
V_GSB = 1.5 Vdc, Two--Tone Measurements
--20 _{(f1 + f2)/2 = Center Frequency of 2017.5 MHz}
IM3--L
--30
IM3--U
--40
IM5--U _IM5--L
--50
IM7--U _IM7--L
--60
1
10
100
TWO--TONE SPACING (MHz)
Figure 5. Intermodulation Distortion Products
versus Two--Tone Spacing
18.5
1
18
0
17.5
--1
G_ps
--2 dB = 7.64 W
η_D
48
--26
44
--28
ACPR
40
--30
17
--2 --1 dB = 5.48 W
36
--32
16.5
--3
--3 dB = 10.07 W
32
--34
V_DD = 32 Vdc, I_DQA = 150 mA
PARC
16
--4
V_GSB = 1.5 Vdc, f = 2017.5 MHz
28
--36
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
15.5
--5
24
--38
3
6
9
12
15
P_out, OUTPUT POWER (WATTS)
Figure 6. Output Peak--to--Average Ratio
Compression (PARC) versus Output Power
RF Device Data
Freescale Semiconductor
MRF7P20040HR3 MRF7P20040HSR3
5