MRF7P20040HR3_10 Datasheet, PDF (2/16 Pages) Freescale Semiconductor, Inc – RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22--A114)
1A (Minimum)
Machine Model (per EIA/JESD22--A115)
B (Minimum)
Charge Device Model (per JESD22--C101)
IV (Minimum)
Table 4. Electrical Characteristics (T_A = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Off Characteristics ⁽¹⁾
Zero Gate Voltage Drain Leakage Current
(V_DS = 65 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(V_DS = 32 Vdc, V_GS = 0 Vdc)
I_DSS
—
—
1
μAdc
Gate--Source Leakage Current
(V_GS = 5 Vdc, V_DS = 0 Vdc)
I_GSS
—
—
1
μAdc
On Characteristics ⁽¹⁾
Gate Threshold Voltage
(V_DS = 10 Vdc, I_D = 33.5 μAdc)
V_GS(th)
1.2
2
2.7
Vdc
Gate Quiescent Voltage
(V_DD = 32 Vdc, I_DA = 150 mAdc, Measured in Functional Test)
V_GS(Q)
2
2.7
3.5
Vdc
Drain--Source On--Voltage
(V_GS = 10 Vdc, I_D = 0.325 Adc)
V_DS(on)
0.1
0.24
0.3
Vdc
Functional Tests ^(2,3) (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc, P_out = 10 W Avg.,
f = 2025 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured
in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset.
Power Gain
Drain Efficiency
G_ps
16
18.2
21
dB
η_D
39
42.6
—
%
Output Peak--to--Average Ratio @ 0.01% Probability on CCDF
PAR
6.9
7.3
—
dB
Adjacent Channel Power Ratio
ACPR
—
--34.8
--30
dBc
Input Return Loss
IRL
—
--17.8
--10
dB
Typical Performance ⁽³⁾ (In Freescale Doherty Test Fixture, 50 ohm system) V_DD = 32 Vdc, I_DQA = 150 mA, V_GSB = 1.5 Vdc,
2010--2025 MHz Bandwidth
P_out @ 1 dB Compression Point, CW
P_out @ 3 dB Compression Point, CW ⁽⁴⁾
P1dB
—
35
—
P3dB
—
50
—
IMD Symmetry @ 15 W PEP, P_out where IMD Third Order
Intermodulation  30 dBc
IMD_sym
—
8
—
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
W
W
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBW_res
—
70
—
MHz
Gain Flatness in 15 MHz Bandwidth @ P_out = 10 W Avg.
Gain Variation over Temperature
(--30°C to +85°C)
G_F
—
0.04
—
dB
∆G
—
0.013
—
dB/°C
Output Power Variation over Temperature
(--30°C to +85°C) ⁽⁴⁾
∆P1dB
—
0.006
—
dB/°C
1. Each side of device measured separately.
2. Part internally matched both on input and output.
3. Measurement made with device in a Symmetrical Doherty configuration.
4. Exceeds recommended operating conditions. See CW operation data in Maximum Ratings table.
MRF7P20040HR3 MRF7P20040HSR3
2
RF Device Data
Freescale Semiconductor