MMZ09312B_12 Datasheet, PDF (6/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

TYPICAL CHARACTERISTICS — 900 MHz, 5 VOLT OPERATION
--30
--33
V_CC1 = V_CC2 = V_BIAS = 5 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
--36 750 kHz Measurement Offset
--39 ^{30 kHz Measurement Bandwidth}
--42
25°C
--45
--48
85°C
--40°C
--51
ACPR
--54
--57
300
270
240
I_CC
210
180
85°C
150
120
--40°C ₉₀
60
25°C ₃₀
--60
0
11 13 15 17 19 21 23 25 27
P_out, OUTPUT POWER (dBm)
Figure 8. ACPR versus Collector Current versus
Output Power versus Temperature
36
34 _Gain
32
--40°C
50
25°C
45
40
30
35
28 _{VCC1 = VCC2 = VBIAS = 5 Vdc, f = 900 MHz}
85°C
30
26 ^{Single--Carrier IS--95, 9 Channel Forward}
750 kHz Measurement Offset
24 _{30 kHz Measurement Bandwidth}
25
85°C
20
22
20
18 ^PAE
--40°C
15
25°C
10
5
16
0
11 13 15 17 19 21 23 25 27
P_out, OUTPUT POWER (dBm)
Figure 9. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
32
25°C
30
--40°C
28
85°C
26
24
22
20
18
700
V_CC1 = V_CC2 = V_BIAS = 5 Vdc
760
820
880
940
1000
f, FREQUENCY (MHz)
Figure 10. P1dB versus Frequency versus
Temperature, CW
2
1.8 ^VCC1 ^{= V}CC2 ^{= V}BIAS ^{= 5 Vdc, f = 900 MHz}
Single--Carrier IS--95, 9 Channel Forward
1.6 _{750 kHz Measurement Offset}
1.4 30 kHz Measurement Bandwidth
--40°C
1.2
85°C
1
0.8
0.6
25°C
0.4
0.2
0
11 13 15 17 19 21 23 25 27
P_out, OUTPUT POWER (dBm)
Figure 11. Power Detector versus Output Power
versus Temperature
MMZ09312BT1
6
RF Device Data
Freescale Semiconductor, Inc.