MMZ09312B_12 Datasheet, PDF (14/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

TYPICAL CHARACTERISTICS — 450 MHz, 5 VOLT OPERATION
38
50
36
45
34 ^Gain
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32
35
30 ^VCC1 ^{= V}CC2 ^{= V}BIAS ^{= 5 Vdc}
30
f = 450 MHz
28
25
26
20
24
15
PAE
22
10
20
5
18
0
15
17
19
21
23
25
27
29
P_out, OUTPUT POWER (dBm)
Figure 26. Power Gain versus Power Added
Efficiency versus Output Power, CW
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30
28
26
24
22
20
18
400
V_CC1 = V_CC2 = V_BIAS = 5 Vdc
440
480
520
560
600 640
f, FREQUENCY (MHz)
Figure 27. P1dB versus Frequency, CW
4
3.6 ^VCC1 ^{= V}CC2 ^{= V}BIAS ^{= 5 Vdc}
f = 450 MHz
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
15
17
19
21
23
25
27
29
P_out, OUTPUT POWER (dBm)
Figure 28. Power Detector versus Output Power, CW
MMZ09312BT1
14
RF Device Data
Freescale Semiconductor, Inc.