MMZ09312B_12 Datasheet, PDF (10/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

TYPICAL CHARACTERISTICS — 900 MHz, 3.3 VOLT OPERATION
0
400
--6
V_CC1 = V_CC2 = V_BIAS = 3.3 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
360
--12 750 kHz Measurement Offset
320
--18 ^{30 kHz Measurement Bandwidth}
280
--24
240
--30
200
25°C
I_CC
--36
160
--42
85°C
--40°C ₁₂₀
--48
--54
--40°C
ACPR
25°C ₈₀
85°C
40
--60
0
10 12 14 16 18 20 22 24 26
P_out, OUTPUT POWER (dBm)
Figure 17. ACPR versus Collector Current
versus Output Power versus Temperature
34
32 ^Gain
--40°C
50
25°C
45
30
40
28
85°C
35
26
V_CC1 = V_CC2 = V_BIAS = 3.3 Vdc, f = 900 MHz
Single--Carrier IS--95, 9 Channel Forward
24 750 kHz Measurement Offset
85°C
30
25
22 ^{30 kHz Measurement Bandwidth}
20
20
18
PAE
16
--40°C
25°C
15
10
5
14
0
10 12 14 16 18 20 22 24 26
P_out, OUTPUT POWER (dBm)
Figure 18. Power Gain versus Power Added
Efficiency versus Output Power versus Temperature
30
28
25°C
26
--40°C
85°C
24
22
20
18
16
700
V_CC1 = V_CC2 = V_BIAS = 3.3 Vdc
760
820
880
940
1000
f, FREQUENCY (MHz)
Figure 19. P1dB versus Frequency versus
Temperature, CW
3
2.7 ^{VCC1 = VCC2 = VBIAS = 3.3 Vdc, f = 900 MHz}
Single--Carrier IS--95, 9 Channel Forward
2.4 _{750 kHz Measurement Offset}
2.1 ^{30 kHz Measurement Bandwidth}
1.8
--40°C
1.5
1.2
85°C
0.9
0.6
25°C
0.3
0
10 12 14 16 18 20 22 24 26
P_out, OUTPUT POWER (dBm)
Figure 20. Power Detector versus Output Power
versus Temperature
MMZ09312BT1
10
RF Device Data
Freescale Semiconductor, Inc.