MMZ09312B_12 Datasheet, PDF (1/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
The MMZ09312B is a 2 -- stage high efficiency, Class AB InGaP HBT
amplifier designed for use as a linear driver amplifier in wireless base station
applications as well as an output stage in femtocell or repeater applications. It
is suitable for applications with frequencies from 400 to 1000 MHz such as
CDMA, GSM, LTE and ZigBee^R at operating voltages from 3 to 5 Volts. The
amplifier is housed in a cost--effective, surface mount QFN plastic package.
• Typical Performance: V_CC1 = V_CC2 = V_BIAS = 5 Volts, I_CQ = 74 mA
Frequency
P_out
(dBm)
G_ps
(dB)
ACPR
(dBc)
PAE
(%)
Test Signal
900 MHz
24
31.5
--50.0
26.0 IS--95 CDMA
750 MHz
17.5
32.0
--50.0
15.3
LTE
10/20 MHz
450 MHz
29
33.0
--40.0
57.0
ZigBee
Features
• Frequency: 400--1000 MHz
• P1dB: 29.6 dBm @ 900 MHz
• Power Gain: 31.7 dB @ 900 MHz
• OIP3: 42 dBm @ 900 MHz
• Active Bias Control (adjustable externally)
• Single 3 to 5 Volt Supply
• Performs Well with Digital Predistortion Systems
• Single--ended Power Detector
• Cost--effective QFN Surface Mount Package
• In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.
Document Number: MMZ09312B
Rev. 1, 2/2012
MMZ09312BT1
400--1000 MHz, 31.7 dB
29.6 dBm
InGaP HBT
CASE 2131--01
QFN 3x3
PLASTIC
Table 1. Typical Performance ⁽¹⁾
Characteristic
450 900
Symbol MHz MHz Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
Output Return Loss (S22)
G_p
IRL
ORL
33.8 31.7 dB
--22
--15
dB
--25
--18
dB
Power Output @ 1dB
Compression
P1dB
28.8 29.6 dBm
1. V_CC1 = V_CC2 = V_BIAS = 5 Vdc, T_A = 25°C, 50 ohm system, CW
Application Circuit
Table 2. Maximum Ratings
Rating
Symbol
Value
Unit
Supply Voltage
V_CC
6
V
Supply Current
I_CC
550
mA
RF Input Power
P_in
14
dBm
Storage Temperature Range T_stg
--65 to +150 °C
Junction Temperature ⁽²⁾
T_J
150
°C
2. For reliable operation, the junction temperature should not
exceed 150°C.
Table 3. Thermal Characteristics
Characteristic
Symbol
Value ⁽³⁾
Thermal Resistance, Junction to Case
Case Temperature 84°C, V_CC1 = V_CC2 = V_BIAS = 5 Vdc
R_θJC
56
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
Unit
°C/W
© Freescale Semiconductor, Inc., 2011--2012. All rights reserved.
RF Device Data
Freescale Semiconductor, Inc.
MMZ09312BT1
1