MMZ09312B_12 Datasheet, PDF (2/20 Pages) Freescale Semiconductor, Inc – Heterojunction Bipolar Transistor

Table 4. Electrical Characteristics (V_CC1 = V_CC2 = V_BIAS = 5 Vdc, 900 MHz, T_A = 25°C, 50 ohm system, in Freescale CW
Application Circuit)
Characteristic
Symbol
Min
Typ
Max
Unit
Small--Signal Gain (S21)
Input Return Loss (S11)
G_p
29
31.7
—
dB
IRL
—
--15
—
dB
Output Return Loss (S22)
ORL
—
--18
—
dB
Power Output @ 1dB Compression
P1dB
—
29.6
—
dBm
Third Order Output Intercept Point, Two--Tone CW
OIP3
—
42
—
dBm
Noise Figure
Supply Current ⁽¹⁾
Supply Voltage ⁽¹⁾
Table 5. ESD Protection Characteristics
NF
—
4
—
dB
I_CQ
69
74
83
mA
V_CC
—
5
—
V
Test Methodology
Class
Human Body Model (per JESD22--A114)
Meets 2000 V for all pins except:
Pin 11 meets 400 V
Pin 8 meets 200 V
Class 0 Rating
Machine Model (per EIA/JESD22--A115)
A
Charge Device Model (per JESD22--C101)
IV
Table 6. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22--A113, IPC/JEDEC J--STD--020
1
1. For reliable operation, the junction temperature should not exceed 150°C.
260
°C
V_BA1
V_BIAS
RF_in
V_BA2 V_CC1
GND
BIAS
CIRCUIT
GND
GND P_DET
Figure 1. Functional Block Diagram
V_CC2
RF_out
RF_out
V_BA2 V_CC1 GND
12 11 10
V_BA1 1
V_{BIAS 2}
RF_in 3
9 V_CC2
8 RFout
7 RFout
456
GND GND P_DET
Figure 2. Pin Connections
MMZ09312BT1
2
RF Device Data
Freescale Semiconductor, Inc.