MC9S08LL64_10 Datasheet, PDF (39/44 Pages) Freescale Semiconductor, Inc – Technical Data

3.14 LCD Specifications
LCD Specifications
Table 20. LCD Electricals, 3-V Glass
No. C
Characteristic
1 D LCD supply voltage
2 D LCD frame frequency
3 D LCD charge pump capacitance
4 D LCD bypass capacitance
5 D LCD glass capacitance
6
7
D V_IREG
8 D V_IREG trim resolution
9
10
D V_IREG ripple
11 ^D V_LCD buffered adder²
1 _{VIREG Max can not exceed VDD –.15 V}
2 _{VSUPPLY = 10, BYPASS = 0}
HRefSel = 0
HRefSel = 1
HRefSel = 0
HRefSel = 1
Symbol
V_LCD
f_Frame
C_LCD
C_BYLCD
C_glass
V_IREG
Δ_RTRIM
—
—
I_Buff
Min
.9
28
—
—
—
.89
1.49
1.5
—
—
—
Typ
1.5
30
100
100
2000
1.00
1.67
—
—
—
1
Max
1.8
58
100
100
8000
1.15
1.85¹
—
.1
.15
Unit
V
Hz
nF
nF
pF
V
% V_IREG
V
μA
3.15 Flash Specifications
This section provides details about program/erase times and program-erase endurance for the Flash
memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply.
For more detailed information about program/erase operations, see the Memory section.
Table 21. Flash Characteristics
No.
C
Characteristic
Symbol
Min
1
D
Supply voltage for program/erase
–40 °C to 85 °C
V_prog/erase
1.8
2
D Supply voltage for read operation
3
D Internal FCLK frequency¹
V_Read
1.8
f_FCLK
150
4
D Internal FCLK period (1/FCLK)
t_Fcyc
5
5
P Byte program time (random location)²
t_prog
6
P Byte program time (burst mode)²
t_Burst
7
P Page erase time²
t_Page
8
P Mass erase time²
t_Mass
9
D Byte program current³
R_IDDBP
—
Typical
—
—
—
—
9
4
4000
20,000
4
Max
3.6
3.6
200
6.67
—
Unit
V
V
kHz
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
mA
MC9S08LL64 Series MCU Data Sheet, Rev. 5
Freescale Semiconductor
39