MC9S08LG32_09 Datasheet, PDF (35/50 Pages) Freescale Semiconductor, Inc – 8-bit HCS08 Central Processor Unit (CPU)

Electrical Characteristics
2.14 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.14.1 Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
custom EMC evaluation board while running specialized EMC test software. The radiated emissions from the microcontroller
are measured in a TEM cell in two package orientations (North and East).
The maximum radiated RF emissions of the tested configuration in all orientations are less than or equal to the reported
emissions levels.
Table 19. Radiated Emissions, Electric Field
Parameter
Symbol Conditions
Frequency
f_OSC/f_BUS
Level¹
(Max)
Unit
Radiated emissions,
electric field
V_{RE_TEM}
V_DD = 5.5
0.15 – 50 MHz 4 MHz crystal
10
T_A = +25 ^oC
Package type =
50 – 150 MHz
16 MHz bus
14
80 LQFP
150 – 500 MHz
8
500 – 1000 MHz
5
IEC Level
L
SAE Level
2
1 _{Data based on qualification test results.}
dBμV
—
—
2.14.2 Conducted Transient Susceptibility
Microcontroller transient conducted susceptibility is measured in accordance with an internal Freescale test method. The
measurement is performed with the microcontroller installed on a custom EMC evaluation board and running specialized EMC
test software designed in compliance with the test method. The conducted susceptibility is determined by injecting the transient
susceptibility signal on each pin of the microcontroller. The transient waveform and injection methodology is based on IEC
61000-4-4 (EFT/B). The transient voltage required to cause performance degradation on any pin in the tested configuration is
greater than or equal to the reported levels unless otherwise indicated by footnotes below Table 20.
Table 20. Conducted Susceptibility, EFT/B
Parameter
Symbol
Conditions
f_OSC/f_BUS
Result
Amplitude¹
(Min)
Unit
Conducted susceptibility, electrical V_{CS_EFT}
fast transient/burst (EFT/B)
V_DD = 5.5
T_A = +25 ^oC
4 kHz crystal A
4 MHz bus B
Package type = 80-pin LQFP
C
D
>4.0²
kV
>4.0³
>4.0⁴
>4.0
1 _{Data based on qualification test results. Not tested in production.}
2 _{Exceptions as covered in footnotes 3 and 4.}
MC9S08LG32 Series Data Sheet, Rev. 7
Freescale Semiconductor
35