MC9S08LG32_09 Datasheet, PDF (13/50 Pages) Freescale Semiconductor, Inc – 8-bit HCS08 Central Processor Unit (CPU)

Electrical Characteristics
Table 7. ESD and Latch-Up Protection Characteristics
No.
Rating¹
Symbol
Min
Max
Unit
1 Human body model (HBM)
V_HBM
2500
—
V
2 Charge device model (CDM)
V_CDM
750
—
V
3 Latch-up current at T_A = 85 °C
I_LAT
±100
—
mA
1 _{Parameter is achieved by design characterization on a small sample size from typical devices}
under typical conditions unless otherwise noted.
2.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 8. DC Characteristics
Num C
Characteristic
Symbol
Min
1 — Operating Voltage
—
2.7
2 P Output high voltage — Low Drive (PTxDSn = 0)
V_OH
5 V, ILoad = –2 mA
3 V, ILoad = –0.6 mA
Output high voltage — High Drive (PTxDSn = 1) V
5 V, ILoad = –10 mA
3 V, ILoad = –3 mA
3 P Output low voltage — Low Drive (PTxDSn = 0)
V_OL
5 V, ILoad = 2 mA
3 V, ILoad = 0.6 mA
Output low voltage — High Drive (PTxDSn = 1)
5 V, ILoad = 10 mA
3 V, ILoad = 3 mA
4 P Output high current — Max total I_OH for all ports
I_OHT
5V
3V
5 C Output high current — Max total I_OL for all ports
I_OLT
5V
3V
VDD – 0.8
VDD – 0.8
VDD – 0.8
VDD – 0.8
—
—
—
6 P Bandgap voltage reference
V_BG
7 P Input high voltage; all digital inputs
V_IH
8 P Input low voltage; all digital inputs
V_IL
9 P Input hysteresis; all digital inputs
10 P Input leakage current; input only pins²
V_In = V_DD or V_SS
V_hys
|I_In|
11 P High impedence (off-state) leakage current
|I_OZ|
V_In = V_DD or V_SS
12 P Internal pullup resistors³
R_PU
13 P Internal pulldown resistors⁴
R_PD
—
0.65 x V_DD
—
0.06 x V_DD
—
—
20
20
Typ¹
—
—
—
Max Unit
5.5
V
V
—
—
—
—
—
—
V
—
0.8
—
0.8
—
0.8
—
0.8
—
mA
100
60
—
mA
100
60
1.225
—
V
—
—
V
— 0.35 x V_DD V
—
—
mV
0.1
1
μA
0.1
1
μA
45
65
kΩ
45
65
kΩ
MC9S08LG32 Series Data Sheet, Rev. 7
Freescale Semiconductor
13