MC9S08MP16 Datasheet, PDF (33/36 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)

Electrical Characteristics
2.15 Flash Memory Specifications
This section provides details about program/erase times and program-erase endurance for the flash memory.
Program and erase operations do not require any special power sources other than the normal V_DD supply. For more detailed
information about program/erase operations, see the Memory section.
Table 20. Flash Memory Characteristics
Num C
Characteristic
Symbol
Min
Typical
Max
Unit
1
— Supply voltage for program/erase
-40°C to 125°C
V_prog/erase
2.7
5.5
V
2
— Supply voltage for read operation
3
— Internal FCLK frequency¹
V_Read
2.7
f_FCLK
150
5.5
V
200
kHz
4
— Internal FCLK period (1/FCLK)
5
C Byte program time (random location)²
6
— Byte program time (burst mode)²
7
D Page erase time²
8
D Mass erase time²
9
C Byte program current³
10
C Page erase current³
Program/erase endurance⁴
11
C
T_L to T_H = –40°C to + 125°C
T = 25°C
t_Fcyc
t_prog
t_Burst
t_Page
t_Mass
R_IDDBP
R_IDDPE
5
—
—
10,000
9
4
4000
20,000
4
6
—
100,000
6.67
—
—
—
—
μs
t_Fcyc
t_Fcyc
t_Fcyc
t_Fcyc
mA
mA
cycles
12
C Data retention⁵
t_{D_ret}
15
100
—
years
1 _{The frequency of this clock is controlled by a software setting.}
2 _{These values are hardware state machine controlled. User code does not need to count cycles. This information supplied for}
calculating approximate time to program and erase.
3 _{The program and erase currents are additional to the standard run IDD. These values are measured at room temperatures with}
V_DD = 5.0 V, bus frequency = 4.0 MHz.
4 _{Typical endurance for Flash is based upon the intrinsic bit cell performance. For additional information on how Freescale defines}
typical endurance, please refer to Engineering Bulletin EB619/D, Typical Endurance for Nonvolatile Memory.
5 _{Typical data retention values are based on intrinsic capability of the technology measured at high temperature and de-rated to}
25°C using the Arrhenius equation. For additional information on how Freescale defines typical data retention, please refer to
Engineering Bulletin EB618/D, Typical Data Retention for Nonvolatile Memory.
2.16 EMC Performance
Electromagnetic compatibility (EMC) performance is highly dependant on the environment in which the MCU resides. Board
design and layout, circuit topology choices, location and characteristics of external components as well as MCU software
operation all play a significant role in EMC performance. The system designer should consult Freescale applications notes such
as AN2321, AN1050, AN1263, AN2764, and AN1259 for advice and guidance specifically targeted at optimizing EMC
performance.
2.16.1 Radiated Emissions
Microcontroller radiated RF emissions are measured from 150 kHz to 1 GHz using the TEM/GTEM Cell method in accordance
with the IEC 61967-2 and SAE J1752/3 standards. The measurement is performed with the microcontroller installed on a
MC9S08MP16 Series Data Sheet, Rev. 1
Freescale Semiconductor
33