MC9S08MP16 Datasheet, PDF (11/36 Pages) Freescale Semiconductor, Inc – 8-Bit HCS08 Central Processor Unit (CPU)

Electrical Characteristics
where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring P_D (at equilibrium)
for a known T_A. Using this value of K, the values of P_D and T_J can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of T_A.
2.5 ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits,
normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure
that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During
the device qualification, ESD stresses were performed for the human body model (HBM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete
DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot
temperature, unless instructed otherwise in the device specification.
Table 5. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
Storage capacitance
R1
1500
Ω
C
100
pF
Number of pulses per pin
—
3
Latch-up Minimum input voltage limit
– 2.5
V
Maximum input voltage limit
7.5
V
Table 6. ESD and Latch-Up Protection Characteristics
No.
Rating¹
Symbol
Min
Max
Unit
1
Human body model (HBM)
V_HBM
± 2000
—
V
2
Charge device model (CDM)
V_CDM
± 500
—
V
3
Latch-up current at T_A = 105°C
I_LAT
± 100
—
mA
1 _{Parameter is achieved by design characterization on a small sample size from typical devices}
under typical conditions unless otherwise noted.
2.6 DC Characteristics
This section includes information about power supply requirements and I/O pin characteristics.
Table 7. DC Characteristics
Num C
Characteristic
Symbol Condition
Min
1 — Operating Voltage
V_DD
2.7
2 — Analog Supply voltage delta to V_DD (V_DD – V_DDA)⁽²⁾ ΔV_DDA
—
3 — Analog Ground voltage delta to V_SS (V_SS – V_SSA)⁽²⁾ ΔV_SSA
—
Typ¹
—
0
0
Max Unit
5.5
V
±100 mV
±100 mV
MC9S08MP16 Series Data Sheet, Rev. 1
Freescale Semiconductor
11