K10P81M100SF2_11 Datasheet, PDF (29/64 Pages) Freescale Semiconductor, Inc – K10 Sub-Family Data Sheet Supports the following Flash write voltage range: 1.71 to 3.6 V

Peripheral operating requirements and behaviors
6.4.1 Flash (FTFL) electrical specifications
This section describes the electrical characteristics of the FTFL module.
6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 18. NVM program/erase timing specifications
Symbol Description
t_hvpgm4 Longword Program high-voltage time
t_hversscr Sector Erase high-voltage time
t_hversblk256k Erase Block high-voltage time for 256 KB
Min.
—
—
—
Typ.
20
20
160
Max.
TBD
100
800
Unit
Notes
μs
ms
1
ms
1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 19. Flash command timing specifications
Symbol
t_rd1blk256k
Description
Read 1s Block execution time
• 256 KB data flash
Min.
—
Typ.
—
Max.
1.4
Unit
Notes
ms
t_rd1sec2k Read 1s Section execution time (flash sector)
—
—
40
μs
1
t_pgmchk Program Check execution time
—
—
35
μs
1
t_rdrsrc Read Resource execution time
—
—
35
μs
1
t_pgm4 Program Longword execution time
—
50
TBD
μs
Erase Flash Block execution time
2
t_ersblk256k
• 256 KB data flash
—
160
800
ms
t_ersscr Erase Flash Sector execution time
Program Section execution time
t_pgmsec512
t_pgmsec1k
t_pgmsec2k
• 512 B flash
• 1 KB flash
• 2 KB flash
—
20
100
ms
2
—
TBD
TBD
ms
—
TBD
TBD
ms
—
TBD
TBD
ms
t_rd1all
t_rdonce
t_pgmonce
Read 1s All Blocks execution time
Read Once execution time
Program Once execution time
—
—
2.8
ms
—
—
35
μs
1
—
50
TBD
μs
Table continues on the next page...
K10 Sub-Family Data Sheet Data Sheet, Rev. 4, 3/2011.
Freescale Semiconductor, Inc.
Preliminary
29