MC9S08PT60 Datasheet, PDF (21/37 Pages) Freescale Semiconductor, Inc – MC9S08PT60

Peripheral operating requirements and behaviors
Table 10. Flash characteristics (continued)
C
Characteristic
D
Read Once
D
Program Flash (2 word)
D
Program Flash (4 word)
D
Program Once
D
Program EEPROM (1 Byte)
D
Program EEPROM (2 Byte)
D
Erase All Blocks
D
Erase Flash Block
D
Erase Flash Sector
D
Erase EEPROM Sector
D
Unsecure Flash
D
Verify Backdoor Access Key
D
Set User Margin Level
C FLASH Program/erase endurance T_L to
T_H = -40 °C to 105 °C
C EEPROM Program/erase endurance TL
to TH = -40 °C to 105 °C
C Data retention at an average junction
temperature of T_Javg = 85°C after up to
10,000 program/erase cycles
Symbol
t_RDONCE
t_PGM2
t_PGM4
t_PGMONCE
t_DPGM1
t_DPGM2
t_ERSALL
t_ERSBLK
t_ERSPG
t_DERSPG
t_UNSECU
t_VFYKEY
t_MLOADU
n_FLPE
n_FLPE
t_{D_ret}
Min¹
—
0.12
0.20
0.20
0.02
0.17
96.01
95.98
19.10
4.81
96.01
—
—
10 k
50 k
15
Typical²
—
0.12
0.21
0.21
0.02
0.18
100.78
100.75
20.05
5.05
100.78
—
—
100 k
500 k
100
Max³
455
0.14
0.24
0.24
0.02
0.20
125.80
125.76
25.05
6.30
125.80
469
442
—
—
—
Unit⁴
t_cyc
ms
ms
ms
ms
ms
ms
ms
ms
ms
ms
t_cyc
t_cyc
Cycles
Cycles
years
1. Minimun times are based on maxmum f_NVMOP and maximum f_NVMBUS
2. Typical times are based on typical f_NVMOP and maximum f_NVMBUS
3. Maximum times are based on minimum f_NVMOP and maximum f_NVMBUS
4. t_cyc = 1 / f_NVMBUS
Program and erase operations do not require any special power sources other than the
normal V_DD supply. For more detailed information about program/erase operations, see
the Memory section.
6.3 Analog
MC9S08PT60 Series Data Sheet, Rev. 3, 4/2012.
Freescale Semiconductor, Inc.
21