MC9S08JE128 Datasheet, PDF (15/44 Pages) Freescale Semiconductor, Inc – Covers: MC9S08JE128 and MC9S08JE64

Preliminary Electrical Characteristics
Solving Equation 1 and Equation 2 for K gives:
K = P_D × (T_A + 273°C) + θ_JA × (P_D)²
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring P_D (at equilibrium)
for a known T_A. Using this value of K, the values of P_D and T_J can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of T_A.
2.4 ESD Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete dc parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Table 7. ESD and Latch-up Test Conditions
Model
Human Body
Machine
Latch-up
Description
Series Resistance
Storage Capacitance
Number of Pulse per pin
Series Resistance
Storage Capacitance
Number of Pulse per pin
Minimum input voltage limit
Maximum input voltage limit
Symbol
Value
Unit
R1
1500
Ω
C
100
pF
—
3
—
R1
0
Ω
C
200
pF
—
3
—
—
–2.5
V
—
7.5
V
Table 8. ESD and Latch-Up Protection Characteristics
#
Rating
1 Human Body Model (HBM)
2 Machine Model (MM)
3 Charge Device Model (CDM)
4 Latch-up Current at T_A = 125°C
Symbol
V_HBM
V_MM
V_CDM
I_LAT
Min
±2000
±200
±500
±100
Max
—
—
—
—
Unit C
V
T
V
T
V
T
mA T
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