FAN7171_F085 Datasheet, PDF (9/12 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications

40/60/80V PowerTrench^® MOSFETs
Advantages
• Smaller package size
(Power56 and TO-220 3-lead)
with maximum thermal
performance to system size
• Lower Q_g to reduce gate
driving loss
• Low Q_gd/Q_gs ratio to
prevent undesirable turn-on,
improving system reliability
• Low dynamic parasitic
capacitances to reduce gate
driving loss for high-
frequency applications
Applications
• Synchronous rectification
for server/telecom PSU
• Battery charger and
battery protection circuit
• DC motor drives and
uninterruptible power
supplies
• Micro solar inverter
For more information, please visit:
fairchildsemi.com/products/mosfets/powertrench.html
fairchildsemi.com/pf/FD/FDMS015N04B.html
fairchildsemi.com/pf/FD/FDMS039N08B.html
fairchildsemi.com/pf/FD/FDP020N06B.html
fairchildsemi.com/pf/FD/FDP027N08B.html
Mid-Voltage MOSFETs Enhance Synchronous
Rectification in SMPS Designs
Designers of AC-DC power systems need cost-effective power supply solutions
that minimize board space while increasing efficiency and reducing power dissi-
pation. Power density and light-load efficiency improvement are also key issues.
Part of the expanded PowerTrench^® MOSFET family, Fairchild’s newest
mid-voltage power MOSFET portfolio of optimized power switches meets these
needs. The family combines a small gate charge (Q_g), a small reverse recovery
charge (Q_rr) and a soft-reverse recovery body diode, allowing for fast switch-
ing speeds. Available in a 40V, 60V and 80V rating, these devices require less
snubber circuitry due to an optimized soft-body diode that reduces voltage spikes
by up to 15% over the competitor’s solution.
The first devices available include the 40V FDMS015N04B and 80V
FDMS039N08B available in a Power56 package, and the 60V FDP020N06B
and 80V FDP027N08B available in a TO-220 3-lead package.
Test condition: V_DD = 40V, I_d = 50A, V_gs = 0V-10V
180
169.2
160
140
134.1
120
100
80
60
40
20
0
FDP027N08B
Competitor A
Test condition: V_DD = 40V, I_d = 50A, di/dt = 500A/μs, T_J = 25°C
350
323.5
300
269.7
250
200
150
100
50
0
FDP027N08B
Competitor B
Benchmarking of Reduced Reverse Recovery
Charge (Q_rr) and Reduced Gate Charge (Q_G)
Product Number
FDP020N06B
FDP027N08B
FDMS039N08B
FDMS015N04B
B_V (V)
60
80
80
40
R_DS(ON) (mΩ)
2
2.7
3.9
1.5
Q_g (nC)
204
137
77
87
Package
TO220
TO220
PQFN56
PQFN56