FAN7171_F085 Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications

Dual N-Channel PowerTrench^® MOSFET
Advantages
• Control N-channel MOSFET
with R_DS(ON)= 5.4mΩ typical,
(7.3mΩ max) at V_GS = 4.5V
• Synchronous N-channel
MOSFET with R_DS(ON) = 1.4mΩ
typical, (2.1mΩ max) at
V_GS = 4.5V
• Low inductance packaging
shortens rise/fall times,
resulting in lower switching
losses
• MOSFET integration enables
optimum layout for lower
circuit inductance and reduced
switch node ringing
Achieve Highest Power Density, Efficiency in
Power Supply Designs
The challenge of providing higher power density and efficiency in less board
space goes hand-in-hand with the increasing requirements to provide added
functionality in high-density embedded DC-DC power supplies. A solution to
this dilemma, Fairchild’s FDPC8011S, has been developed to operate at higher
switching frequencies, and includes two specialized N-channel MOSFETs in a
dual package. The switch node has been internally connected to enable easy
placement and routing of synchronous buck converters. The control MOSFET
(Q1) and synchronous SyncFET^™ (Q2) have been designed to provide optimal
power efficiency.
The FDPC8011S consists of a 1.4mΩ SyncFET technology and a 5.4mΩ control,
low figure of merit N-channel MOSFET integrated in an all-clip package, which
helps reduce the capacitor count and inductor size. The device’s source down,
low-side allows for simple placement and routing, enabling a more compact
board layout and achieving optimal thermal performance.
Applications
• Computing
• Communications
• General purpose point-of-load
For more information, please visit:
fairchildsemi.com/pf/FD/FDPC8011S.html
Power Clip Dual N-Channel PowerTrench^® MOSFET
Product
Number
Schottky
Body
Diode
BV_DSS
(V)
FDPC8011S Yes
25
R_DS(ON) Max
(mΩ)
@ 4.5V V_GS
High- Low-
Side Side
7.3 1.4
Q_g Typ (nC) @
V_GS = 4.5V
High- Low-
Side Side
9
30
C_OSS Typ
(pF) High-Side
Dimension
(mm)
Low-
High-
Side
Side _{3.3 x 3.3}
332 1126