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FAN7171_F085 Datasheet, PDF (6/12 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications
P-Channel PowerTrench® MOSFETs
Advantages
• Occupies only 0.64mm2 of
PCB area
• Ultra-thin package: less than
0.4mm height when mounted
to PCB
• Excellent thermal
characteristics
• HBM ESD protection level
2kV (FDZ661PZ)
Applications
• Battery management
• Load switch
• Battery protection
Save Space and Manage Thermal Issues
in Mobile Designs
Designers of mobile devices are challenged to save space, increase efficiency
and manage thermal issues in their end applications. Now minimizing both board
space and RDS(ON) in a miniature form factor is possible with the FDZ661PZ
and FDZ663P P-channel, 1.5V specified PowerTrench® thin WLCSP MOS-
FETs. These advanced WLCSP MOSFETs use a state-of-the-art “fine pitch,”
thin WLCSP packaging process which enables the devices to combine excel-
lent thermal transfer characteristics, ultra-low profile (<0.4mm) and small
(0.8mm x 0.8mm) packaging, low gate charge, and low RDS(ON).
For more information, please visit:
fairchildsemi.com/pf/FD/FDZ661PZ.html
fairchildsemi.com/pf/FD/FDZ663P.html
State-of-the-Art Fine Pitch,Thin WLCSP for Mobile Devices
Product
Number
BVDSS VGS
(V) (V)
VGS(th) (V) Typ
RDS(ON)
(mΩ)
Max
Qg Typ
(nC) @
VGS =
4.5V
ID
(A)
PD
(W)
Package
FDZ661PZ -20 ±8 -1.5VGS - 4.5VGS 6.3
315mΩ 140mΩ
8.8
-2.6
0.4
WLCSP
(0.8mm x 0.8mm)
FDZ663P
-20
±8
-1.5VGS - 4.5VGS
5.9
288mΩ 134mΩ
8.2
-2.7
0.4
WLCSP
(0.8mm x 0.8mm)