FAN7171_F085 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications

30V Power33 MOSFETs
Advantages
• High performance technology
for best-in-class R_DS(ON) of
1.3mΩ max
• 3.3mm x 3.3mm industry-
standard form factor,
PQFN – saves board space
• Lower power conduction loss
• Higher power density
• Higher efficiency
Applications
• Isolated DC-DC
synchronous rectification
• Point-of-load
synchronous buck conversion
• High efficiency load
switch and low-side switching
• O-ring FET
Reduce Board Space with
Best-in-Class Power Density
Power efficiency standards and end-system requirements are forcing design-
ers to seek energy-efficient solutions that help shrink their applications’ power
supply form factor. Fairchild’s FDMC8010 30V Power33 MOSFET meets these
needs while improving power density—in a 3.3mm x 3.3mm PQFN form factor
that has a 66% footprint area savings.
Using Fairchild’s PowerTrench^® technology, the FDMC8010 is well-suited for
applications where the lowest R_DS(ON) is required in small spaces. In isolated
1/16th brick DC-DC converter applications, the Power33 MOSFET’s R_DS(ON) of
only 1.3mΩ max, is 25% smaller than the competitive solution in this footprint.
Additionally, the device reduces conduction losses, thereby improving thermal
efficiency by up to 25%.
For more information, please visit:
fairchildsemi.com/pf/FD/FDMC8010.html
Shrink Your Design While Delivering Best-in-Class Power Density
Product
Number
BV_DSS
(V)
FDMC8010 25
I_D (A)
T_A = 25°C
30
R_DS(ON) Max
Q_g (nC)
0V to
4.5V
Q_gd
(nC)
pF
C_ISS
Package
10V
4.5V
PQFN
45 9.5 4405 3.3mm x 3.3mm
1.3mΩ 1.8mΩ
(Power33)