FAN7171_F085 Datasheet, PDF (8/12 Pages) Fairchild Semiconductor – New Products, Tips and Tools for Power and Mobile Applications

650V IGBTs
Advantages
• Positive temperature
co-efficient for easy parallel
operation
• High-current capability
enables high power
DC-AC conversion
• Maximum junction
temperature: T_J = 175ºC
• Low saturation voltage:
V_{CE (sat)} = 1.9V (typical) @
I_C = 40A/60A rated current
• Fast switching speed
allows the system to
maintain high efficiency
• Low conduction and
switching loss
• Wide SOA (Safe Operating
Area)—allows for higher
power dissipation
• Tight parameter distribution
Applications
• Solar PV inverter
• Micro converter systems
• Central inverter systems
• Micro inverter systems
• UPS, SMPS, welder and
PFC applications
For more information, please visit:
fairchildsemi.com/pf/FG/FGA40N65SMD.html
fairchildsemi.com/pf/FG/FGA60N65SMD.html
fairchildsemi.com/applications/
solar-inverter/index.html
fairchildsemi.com/onlineseminars/
High-Voltage Blocking Capability
Without Sacrificing Performance
The challenge of improving energy efficiency with heat and thermal regulation, while
keeping component count low, just became easier. Fairchild’s FGAxxN65SMD series
of 650V IGBTs for photovoltaic inverter applications addresses this need—
without sacrificing performance.
Fairchild’s Field Stop IGBT technology enables designers to develop a highly
reliable system design with higher input voltage while offering optimum
performance where low conduction and switching losses are essential.
This functionality means designs benefit from high current handling capability,
positive temperature coefficient, tight parameter distribution and a wide safe
operating area.
98.00
97.00
96.00
95.00
94.00
93.00
92.00
91.00
300
40N65SMD
40N60SMD
Competitor A
Competitor B
600
900
1500
P_OUT (Output Power) (W)
2250
3000
CEC (California Energy Commission) Weighted
Efficiency–Tested in PV Inverter System
Q1
Q3
Grid
Q2
Q4
Application Diagram of Central MPPT System
(Full-bridge Inverter)
Product
Number
FGA40N65SMD
FGA60N65SMD
BV_CES
(V)
I_C @
100°C
(A)
V_ce(sat)
Typ
@ 25°C,
15V (V)
E_OFF
Typ
@
25°C
(mJ)
P_D @
25°C
(W)
650 40
1.9 0.26 349
650 60
1.9 0.45 600
V_F Typ
@
25°C
(V)
2.1@
20A
2.1@
30A
t_rr Typ
@
25°C
(ns)
42 @
20A
47 @
30A
T_J
(max)
(°C)
175
175
Package
TO-3PN
TO-3PN