FP7G100US60 Datasheet, PDF (8/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Fig 19. Forward Characteristics
300
250
200
Common Cathode
V = 0V
GE
T = 25o C
C
T = 125o C
C
150
100
50
0
0
1
2
3
4
V_F, Forward Voltage[V]
Fig 20. Reverse Recovery Characteristics
20
T
rr
I
rr
10
T
rr
I
rr
Common Cathode
di/dt = 200A/us
T = 25^o C
C
T = 100o C
C
3
0 20 40 60 80 100
I_F, Forward Current[A]
FP7G100US60 Rev. A
8
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