FP7G100US60 Datasheet, PDF (7/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Fig 13. Switching Loss vs. Collector
100
Common Emitter
V = 300V, V = +/- 15V
CC
GE
I = 100A
C
T = 25oC
C
10 T = 125oC
C
Eoff
1
Eon
0.1
20
40 60 80 100 120 140
I_C, Collector Current[A]
Fig 14. Gate Charge Characteristics
15
12
9
V = 100 V
CC
300 V
200 V
6
3
Common Emitter
R =3Ω
L
T = 25oC
C
0
0
100
200
300
400
Q_g, Gate Charge[nC]
Fig 15. SOA Characteristics
500
100
I MAX. (Pulsed)
C
I MAX. (Continuous)
C
50us
100us
1ms
10
DC Operation
1 Single Nonrepetitive
Pulse T = 25^o C
C
Curves must be derated
linerarly with increase
in temperature
0.10.3
1
10
100 1000
V_CE, Collector-Emitter Voltage[V]
Fig 17. RBSOA Characteristics
600
100
10
1 Single Nonrepetitive
Pulse T = 125o C
J
V = 15V
GE
R = 2.4 Ω
0.1 ₀
G
100
200
300
400
500
600
700
V_CE, Collector-Emitter Voltage[V]
Fig 16. Turn-Off SOA Characteristics
100
10
Safe Operating Area
V = 20V, T = 100^o C
GE
C
1
1
10
100
1000
V_CE, Collector-Emitter Voltage[V]
Fig 18. Transient Thermal Impedance
1
0.1
0.01
T = 25o C
C
IGBT :
1E-3
DIODE :
10^-5 10^-4 10^-3 10^-2 10^-1 10⁰ 10¹
Rectangular Pulse Duration[sec]
FP7G100US60 Rev. A
7
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