FP7G100US60 Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Electrical Characteristics (T_J = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
Min Typ Max Units
Off Characteristics
BV_CES
∆BV_CES/
∆T_J
I_CES
I_GES
Collector-Emitter Breakdown Voltage
V_GE= 0V, I_C = 250µA
Temperature Coeff. of Breakdown Voltage V_GE= 0V, I_C = 1mA
Collector Cut-off Current
Gate-Emitter Leakage Current
V_CE= V_CES, V_GE= 0V
V_GE= V_GES, V_CE= 0V
600 -
-
V
- 0.6 -
V
-
- 250 uA
-
- ± 100 nA
On Characteristics
V_GE(th)
V_CE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
V_GE = 0V, I_C=100mA
I_C = 100A, V_GE = 15V
5.0 6.0 8.5
V
- 2.2 2.8
V
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Capacitance
V_CE = 30V, V_GE = 0V,
f = 1MHz
6085
pF
725
pF
135
pF
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_sc
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
-
34
-
ns
-
24
-
ns
V_CC = 300 V, I_C = 100A,
R_G = 2.4Ω, V_GE = 15V
Inductive Load, T_C = 25°C
-
98
-
ns
-
45
-
ns
- 0.54 -
mJ
- 1.26 -
mJ
- 1.8 -
mJ
-
33
-
ns
-
28
-
ns
V_CC = 300 V, I_C = 100A,
R_G = 2.4Ω, V_GE = 15V
Inductive Load, T_C = 125°C
- 101 -
ns
- 171 -
ns
- 1.12 -
mJ
- 3.18 -
mJ
- 4.3 -
mJ
V_CC = 300 V, V_GE = 15V @ T_C = 100°C
10
-
-
us
- 283 -
nC
V_CE = 300 V, I_C = 100A, V_GE = 15V
-
50
-
nC
- 155 -
nC
FP7G100US60 Rev. A
3
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