FP7G100US60 Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Typical Performance Characteristics
Fig 1. Typical Output Characteristics
240
200
160
15V
12V
20V
120
80
V = 10V
GE
40
Common Emitter
T = 25o C
C
0
0
2
4
6
8
V_CE, Collector-Emitter Voltage[V]
Fig 2. Typical Saturation Voltage Characteristics
250
200
Common Emitter
V = 15V
GE
T = 25o C
C
T = 125o C
C
150
100
50
0
0.3
1
10 20
V_CE, Collector-Emitter Voltage[V]
Fig 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
5
Common Emitter
V = 15V
GE
4
200A
3
100A
2
I = 50A
C
1
0
0
50
100
150
T_C, Case Temperature[^o C]
Fig 4. Load Current vs. Frequency
120
100
V = 300V
CC
Load Current : peak of square wave
80
60
40
20 ^{Duty cycle : 50%}
T = 100o C
C
0 ^{Power Dissipation = 130W}
0.1
1
10
100
Frequency [Khz]
1000
Fig 5. Saturation Voltage vs. V_GE
20
Common Emitter
T = 25^o C
16 ^C
12
8
200A
4
100A
I = 50A
C
0
0
4
8
12 16 20
V_GE, Gate-Emitter Voltage[V]
Fig 6. Saturation Voltage vs. V_GE
20
Common Emitter
T = 25^o C
16 ^C
12
8
200A
4
100A
I = 50A
C
0
0
4
8 12 16 20
V_GE, Gate-Emitter Voltage[V]
FP7G100US60 Rev. A
5
www.fairchildsemi.com