FP7G100US60 Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – Transfer Molded Type IGBT Module

Electrical Characteristics of DIODE (T_J = 25°C, Unless Otherwise Specified)
Symbol
Parameter
Conditions
V_FM
Diode Forward Voltage
I_F = 100A
T_C = 25°C
T_C = 100°C
t_rr
Diode Reverse Recovery Time
T_C = 25°C
T_C = 100°C
I_rr
Diode Peak Reverse Recovery Current
I_F = 100A
di / dt = 200 A/us
T_C = 25°C
T_C = 100°C
Q_rr
Diode Reverse Recovery Charge
T_C = 25°C
T_C = 100°C
Min Typ Max Units
- 1.9 2.8
V
- 1.8 -
- 85 125
ns
- 150 -
-
8 11
A
- 13 -
- 325 635
nC
- 965 -
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJC
R_θCS
Weight
Junction-to-Case (IGBT Part, per 1/2 Module)
Junction-to-Case (DIODE Part, per 1/2 Module)
Case-to-Sink (Conductive grease applied)
Weight of Module
Typ.
-
-
0.05
-
Max.
0.25
0.7
-
90
Units
°C/W
°C/W
°C/W
g
FP7G100US60 Rev. A
4
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