FGPF10N60UNDF Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 600V, 10A Short Circuit Rated IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Current
100
T_J = 125^oC
10
1
0.1
0.01
T_J = 75^oC
T_J = 25^oC
1E-3
50
200
400
600
Reverse Voltage, V_R [V]
Figure 21. Reverse Recovery Time
100
T_C = 25^oC
80 ^{TC = 125oC}
di/dt = 100A/µs
200A/µs
60
di/dt = 100A/µs
40
200A/µs
20
0
0
2
4
6
8
10 12
Forward Current, I_F [A]
Figure 20. Stored Charge
0.3
T_C = 25^oC
T_C = 125^oC
0.2
200A/µs
di/dt = 100A/µs
0.1
200A/µs
0.0
0
di/dt = 100A/µs
2
4
6
8
10 12
Forward Current, I_F [A]
Figure 22.Transient Thermal Impedance of IGBT
1
5
0.5
0.5
1 _0.20.2
0.1^0.10.1
0.05
0.05
0.1 _0.002.02
0.001.01
single pulse
0.01 _{single pulse}
0.01
1E-5
1E-4
0.005
10^-5
10^-4
P_DM
1E-3
0.01
P_DM
t₁
t₂
Duty Factto₁ r, D = t1/t2
DuPtyeFakacTto^{j =r,}
P^td2 m x Zthjc
D = t1/t2
+
T_C
0^P.1^{eak T}j ^{= Pdm x}1 ^{Zthjc + T}C 10
1^R0^-e3ctangular1^P0^{u-2lse Duratio}1ⁿ0^-[1sec]
10⁰
10¹
Rectangular Pulse Duration [sec]
FGPF10N60UNDF Rev.C0
7
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