FGPF10N60UNDF Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – 600V, 10A Short Circuit Rated IGBT

Typical Performance Characteristics
Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
4
I_C = 5A
10A
20A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
12
200V
V_CC = 100V
400V
9
6
3
Common Emitter
T_C = 25^oC
0
0 5 10 15 20 25 30 35 40 45 50
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
50
10
t_r
t_d(on)
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 10A
T_C = 25^oC
T_C = 125^oC
1
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
3000
1000
100
C_ies
C_oes
C_res
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
100
10µs
10
100µs
1
1ms
10 ms
0.1 ^*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
0.01
1
10
DC
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 10A
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
10
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
FGPF10N60UNDF Rev.C0
5
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