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| FGPF10N60UNDF Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 600V, 10A Short Circuit Rated IGBT | |||
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Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Qg
Total Gate Charge
Qge
Gate to Emitter Charge
Qgc
Gate to Collector Charge
VCE = 400V, IC = 10A,
VGE = 15V
Min.
-
-
-
Typ.
37
5
21
Max
Units
nC
nC
nC
Electrical Characteristics of the Diode TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 10A
TC = 25oC
TC = 125oC
trr
Qrr
Diode Reverse Recovery Time
IF = 10A, dIF/dt = 200A/µs
Diode Reverse Recovery Charge
TC = 25oC
TC = 125oC
TC = 25oC
TC = 125oC
Min.
-
-
-
-
-
-
Typ.
1.8
1.7
37.7
78.9
75
221
Max Units
2.2
V
ns
nC
FGPF10N60UNDF Rev.C0
3
www.fairchildsemi.com
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