FGPF10N60UNDF Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 600V, 10A Short Circuit Rated IGBT

TTypical Performance Characteristics
Figure 1. Typical Output Characteristics
80
T_C = 25^oC
70
20V _17V
15V
60
50
40
V_GE = 12V
30
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 2. Typical Output Characteristics
80
T_C = 125^oC
70
20V _17V
15V
60
50
40
V_GE = 12V
30
20
10
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
50
V_GE = 15V
T_C = 25^oC
T_C = 125^oC
40
Figure 4. Transfer Characteristics
60
Common Emitter
V_CE = 20V
50 _{TC = 25oC}
T_C = 125^oC
40
30
30
20
20
10
10
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4.0
Common Emitter
3.5 ^{VGE = 15V}
20A
3.0
2.5
10A
2.0
I_C = 5A
1.5
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
0
3
6
9
12
15
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
10A
4
20A
I_C = 5A
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGPF10N60UNDF Rev.C0
4
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