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| FGPF10N60UNDF Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 600V, 10A Short Circuit Rated IGBT | |||
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Package Marking and Ordering Information
Device Marking
Device
FGPF10N60UNDF FGPF10N60UNDF
Package
TO-220F
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250µA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 10mA, VCE = VGE
IC = 10A, VGE = 15V
IC = 10A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
VCC = 400V, IC = 10A,
RG = 10â¦, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 10A,
RG = 10â¦, VGE = 15V,
Inductive Load, TC = 125oC
VCC = 350V,
RG = 100â¦, VGE = 15V,
TC = 150oC
600
-
-
V
-
-
1
mA
-
-
±10
uA
5.5
6.8
8.5
V
-
2
2.45
V
-
2.3
-
V
-
517
pF
-
65
pF
-
20
pF
-
8.0
ns
-
6.3
ns
-
52.2
ns
-
19.1
24.8
ns
-
0.15
mJ
-
0.05
mJ
-
0.2
mJ
-
8.1
ns
-
7.3
ns
-
55.1
ns
-
34.2
ns
-
0.22
mJ
-
0.08
mJ
-
0.3
mJ
10
-
-
µs
FGPF10N60UNDF Rev.C0
2
www.fairchildsemi.com
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