FGL40N120ANDTU Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT

Typical Performance Characteristics (Continued)
Figure 19. Stored Charge
100
Figure 20. Reverse Recovery Time
400
90
di/dt = 200A/µs
80
70
di/dt = 100A/µs
60
300
di/dt = 200A/µs
200
di/dt = 100A/µs
100
50
0
10 20 30 40 50 60 70
Forward Current , I [A]
F
0
0
10
20
30
40
50
60
70
Forward Current , I [A]
F
Figure 21. Transient Thermal Impedance of IGBT
1
0.1
0.5
0.2
0.1
0.01
0.05
0.02
0.01
1E-3
1E-5
single pulse
1E-4
1E-3
0.01
0.1
Rectangular Pulse Duration [sec]
PPddmm
tt11
tt22
DDuuttyyffaaccttoorrDD==tt11//tt22
PPeeaakkTTjj==PPddmm××ZZtthhjcjc++TT_CC
1
10
7
FGL40N120AND Rev. A2
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