English
Language : 

FGL40N120ANDTU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT
◁
Package Marking and Ordering Information
Device Marking Device
FGL40N120AND FGL40N120AND
Package
TO-264
Reel Size
-
Tape Width
-
Quantity
25
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min.
Typ.
Max. Units
Off Characteristics
BVCES
BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 1mA
VGE = 0V, IC = 1mA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter
Saturation Voltage
IC = 250µA, VCE = VGE
IC = 40A, VGE = 15V
IC = 40A, VGE = 15V,
TC = 125°C
IC = 64A, VGE = 15V
Dynamic Characteristics
Cies
Coes
cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate charge
Gate-Emitter Charge
Gate-Collector Charge
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 600V, IC = 40A,
RG = 5Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCE = 600V, IC = 40A,
VGE = 15V
1200
--
--
--
3.5
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.6
--
--
5.5
2.6
2.9
3.15
3200
370
125
15
20
110
40
2.3
1.1
3.4
20
25
120
45
2.5
1.8
4.3
220
25
130
--
--
1
±250
V
V/°C
mA
nA
7.5
V
3.2
V
--
V
--
V
--
pF
--
pF
--
pF
--
ns
--
ns
--
ns
80
ns
3.45
mJ
1.65
mJ
5.1
mJ
--
ns
--
ns
--
ns
--
ns
--
mJ
--
mJ
--
mJ
330
nC
38
nC
195
nC
2
FGL40N120AND Rev. A2
www.fairchildsemi.com
 ▷