FGL40N120ANDTU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
300
T = 25°C
C
250
20V
17V
15V
200
12V
150
100
V = 10V
GE
50
0
0
2
4
6
8
10
Collector-Emitter Voltage, V [V]
CE
Figure 3. Saturation Voltage vs. Case
Temperature at Variant Current Level
5
Common Emitter
V = 15V
GE
4
80A
3
40A
2
I = 20A
C
1
25
50
75
100
125
Case Temperature, T [°C]
C
Figure 5. Saturation Voltage vs. V_GE
20
Common Emitter
T = 25°C
C
16
12
8
80A
4
40A
I = 20A
C
0
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Figure 2. Typical Saturation Voltage
Characteristics
150
Common Emitter
V = 15V
GE
120
T = 25°C
C
T = 125°C
C
90
60
30
0
0
2
4
6
Collector-Emitter Voltage, V [V]
CE
Figure 4. Load Current vs. Frequency
80
V = 600V
CC
70
Load Current : peak of square wave
60
50
40
30
20
Duty cycle : 50%
10 _{T = 100°C}
C
Power Dissipation = 100W
0
0.1
1
10
100
Frequency [kHz]
1000
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T = 125°C
C
16
12
8
80A
4
40A
I = 20A
C
0
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
4
FGL40N120AND Rev. A2
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