FGL40N120ANDTU Datasheet, PDF (6/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT

Typical Performance Characteristics (Continued)
Figure 13. Switching Loss vs. Collector Current
Common Emitter
V = ±15V, R = 5Ω
GE
G
10
T = 25°C
C
Eon
T = 125°C
C
Eoff
1
0.1
20
30
40
50
60
70
80
Collector Current, I [A]
C
Figure 15. SOA Characteristics
Figure 14. Gate Charge Characteristics
16
Common Emitter
14
R = 15Ω
L
T = 25°C
C
12
Vcc = 200V
600V
10
400V
8
6
4
2
0
0
50
100
150
200
250
Gate Charge, Q [nC]
g
Figure 16. Turn-Off SOA
Ic MAX (Pulsed)
100 Ic MAX (Continuous)
10
1
50µs
100µs
1ms
DC Operation
Single Nonrepetitive
0.1 _{Pulse Tc = 25}o_C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector - Emitter Voltage, V [V]
CE
1000
Figure 17. Forward Characteristics
100
T = 125oC
J
10
T = 25^oC
J
1
0.1
0
T = 125oC
C
T = 25oC
C
1
2
3
4
5
6
Forward Voltage , V [V]
F
100
10
Safe Operating Area
V = 15V, T = 125^oC
1
GE
C
1
10
100
1000
Collector-Emitter Voltage, V [V]
CE
Figure 18. Reverse Recovery Current
10
8
di/dt = 200A/µs
6
4
di/dt = 100A/µs
2
0
0
10
20
30
40
50
60
70
Forward Current , I [A]
F
6
FGL40N120AND Rev. A2
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