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FGL40N120ANDTU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200V NPT IGBT
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Electrical Characteristics of DIODE TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
VFM
Diode Forward Voltage
IF = 40A
TC = 25°C
TC = 125°C
trr
Diode Reverse Recovery Time
TC = 25°C
TC = 125°C
Irr
Diode Peak Reverse Recovery
Current
IF = 40A,
di/dt = 200A/µs
TC = 25°C
TC = 125°C
Qrr
Diode Reverse Recovery Charge
TC = 25°C
TC = 125°C
Min.
--
--
--
--
--
--
--
--
Typ.
3.2
2.7
75
130
8
13
300
845
Max.
4.0
--
112
--
12
--
450
--
Units
V
nS
A
nC
3
FGL40N120AND Rev. A2
www.fairchildsemi.com
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