FGH15T120SMD Datasheet, PDF (7/9 Pages) Fairchild Semiconductor – 1200 V, 15 A Field Stop Trench IGBT

Typical Performance Characteristics
Figure 19. Reverse Recovery Time
Figure 20. Stored Charge
300
T_C = 25^oC
T_C = 175^oC
250
200
150
di_F/dt = 100A/μs
di_F/dt = 200A/μs
100
50
5
di_F/dt = 100A/μs
di_F/dt = 200A/μs
10
15
20
25
30
Forward Current, I_F [A]
1.4
T_C = 25^oC
1.2 _{TC = 175}o_C
1.0
0.8
di_F/dt = 200A/μs
di_F/dt = 100A/μs
0.6
0.4
0.2
0.0
5
di_F/dt = 200A/μs
di_F/dt = 100A/μs
10
15
20
25
30
Forwad Current, I_F [A]
Figure 21. Transient Thermal Impedance of IGBT
0.5
0.5
0.1
0.01
0.3
0.1
0.05
0.02
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
Figure 22. Transient Thermal Impedance of Diode
3
0.5
1
0.3
0.1
0.05
0.1
0.02
0.01
single pulse
0.01
10^-5
10^-4
P_DM
t₁
t₂
Duty Factor, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
10^-3
10^-2
10^-1
10⁰
Rectangular Pulse Duration [sec]
©2013 Fairchild Semiconductor Corporation
7
FGH15T120SMD Rev. C1
www.fairchildsemi.com