FGH15T120SMD Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – 1200 V, 15 A Field Stop Trench IGBT

Electrical Characteristics of the DIODE T_C = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
V_FM
Diode Forward Voltage
I_F = 15 A, T_C = 25^oC
-
I_F = 15 A, T_C = 175^oC
-
t_rr
Diode Reverse Recovery Time
V_R = 600 V, I_F = 15 A,
-
I_rr
Diode Peak Reverse Recovery Current ^{diF/dt = 200 A/us, TC = 25oC}
-
Q_rr
Diode Reverse Recovery Charge
-
E_rec
Reverse Recovery Energy
t_rr
Diode Reverse Recovery Time
V_R = 600 V, I_F = 15 A,
-
di_F/dt = 200 A/us, T_C = 175^oC
-
I_rr
Diode Peak Reverse Recovery Current
-
Q_rr
Diode Reverse Recovery Charge
-
Typ.
2.8
2.3
72
7.4
270
120
183
12
1085
Max.
3.7
-
-
-
-
-
-
-
-
Unit
V
V
ns
A
nC
uJ
ns
A
nC
©2013 Fairchild Semiconductor Corporation
3
FGH15T120SMD Rev. C1
www.fairchildsemi.com